IndiumV3, Main, Repository, bibRecord, 000A87

InP/GaAsSb DHBTs with Simultaneous fT/fMAX = 428/621 GHz

Identifieur interne : 000A87 ( Main/Repository ); précédent : 000A86; suivant : 000A88

InP/GaAsSb DHBTs with Simultaneous fT/fMAX = 428/621 GHz

Auteurs : RBID : Pascal:13-0259629

Descripteurs français

Pascal (Inist)
- Transistor bipolaire hétérojonction, Courant continu, Gain courant, Montage émetteur commun, Tension disruptive, Emetteur, Résistivité couche, Matériau dopé, Collecteur, Fréquence oscillation, Transistor onde millimétrique, Phosphure d'indium, Composé binaire, Antimoniure de gallium, Arséniure de gallium, Composé ternaire, InP, GaAsSb.

English descriptors

KwdEn :
- Binary compound, Collector, Common emitter, Current gain, Direct current, Disruptive voltage, Doped materials, Gallium antimonides, Gallium arsenides, Heterojunction bipolar transistors, Indium phosphide, Millimeter wave transistors, Oscillation frequency, Sheet resistivity, Ternary compound, Transmitter.

Abstract

Type-II InP/GaAsSb double heterojunction bipolar transistors (DHBTs) with an f_MAX of 621 GHz and a simultaneous f_T of 428 GHz are demonstrated. A DC peak current gain β = 19 and a common-emitter breakdown voltage BV_CEO = 5 V are measured for 0.2 × 4.4-μm² emitter devices featuring a 20-nm-thick graded GaAsSb base with a sheet resistance of 1077 Ω/□ and a 125-nm-thick more heavily doped InP collector enabling a higher Kirk current. The present transistors are the first InP/GaAsSb DHBTs with an f_MAX in excess of 600 GHz.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 000953

Links to Exploration step

Pascal:13-0259629

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">InP/GaAsSb DHBTs with Simultaneous f<sub>T</sub>
/f<sub>MAX</sub>
 = 428/621 GHz</title>
<author><name sortKey="Lovblom, Rickard" uniqKey="Lovblom R">Rickard Lövblom</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Department of Informationstechnologie und Elektrotechnik, ETH-Zurich</s1>
<s2>Zurich 8092</s2>
<s3>CHE</s3>
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<country>Suisse</country>
<placeName><settlement type="city">Zurich</settlement>
<region nuts="3" type="region">Canton de Zurich</region>
</placeName>
<orgName type="university">École polytechnique fédérale de Zurich</orgName>
</affiliation>
</author>
<author><name sortKey="Fl Ckiger, Ralf" uniqKey="Fl Ckiger R">Ralf Fl Ckiger</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Department of Informationstechnologie und Elektrotechnik, ETH-Zurich</s1>
<s2>Zurich 8092</s2>
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<region nuts="3" type="region">Canton de Zurich</region>
</placeName>
<orgName type="university">École polytechnique fédérale de Zurich</orgName>
</affiliation>
</author>
<author><name sortKey="Alexandrova, Maria" uniqKey="Alexandrova M">Maria Alexandrova</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Department of Informationstechnologie und Elektrotechnik, ETH-Zurich</s1>
<s2>Zurich 8092</s2>
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<author><name sortKey="Ostinelli, Olivier" uniqKey="Ostinelli O">Olivier Ostinelli</name>
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<region nuts="3" type="region">Canton de Zurich</region>
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<orgName type="university">École polytechnique fédérale de Zurich</orgName>
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<author><name sortKey="Bolognesi, C R" uniqKey="Bolognesi C">C. R. Bolognesi</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Department of Informationstechnologie und Elektrotechnik, ETH-Zurich</s1>
<s2>Zurich 8092</s2>
<s3>CHE</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<country>Suisse</country>
<placeName><settlement type="city">Zurich</settlement>
<region nuts="3" type="region">Canton de Zurich</region>
</placeName>
<orgName type="university">École polytechnique fédérale de Zurich</orgName>
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</titleStmt>
<publicationStmt><idno type="inist">13-0259629</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0259629 INIST</idno>
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<seriesStmt><idno type="ISSN">0741-3106</idno>
<title level="j" type="abbreviated">IEEE electron device lett.</title>
<title level="j" type="main">IEEE electron device letters</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compound</term>
<term>Collector</term>
<term>Common emitter</term>
<term>Current gain</term>
<term>Direct current</term>
<term>Disruptive voltage</term>
<term>Doped materials</term>
<term>Gallium antimonides</term>
<term>Gallium arsenides</term>
<term>Heterojunction bipolar transistors</term>
<term>Indium phosphide</term>
<term>Millimeter wave transistors</term>
<term>Oscillation frequency</term>
<term>Sheet resistivity</term>
<term>Ternary compound</term>
<term>Transmitter</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Transistor bipolaire hétérojonction</term>
<term>Courant continu</term>
<term>Gain courant</term>
<term>Montage émetteur commun</term>
<term>Tension disruptive</term>
<term>Emetteur</term>
<term>Résistivité couche</term>
<term>Matériau dopé</term>
<term>Collecteur</term>
<term>Fréquence oscillation</term>
<term>Transistor onde millimétrique</term>
<term>Phosphure d'indium</term>
<term>Composé binaire</term>
<term>Antimoniure de gallium</term>
<term>Arséniure de gallium</term>
<term>Composé ternaire</term>
<term>InP</term>
<term>GaAsSb</term>
</keywords>
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<front><div type="abstract" xml:lang="en">Type-II InP/GaAsSb double heterojunction bipolar transistors (DHBTs) with an f<sub>MAX</sub>
 of 621 GHz and a simultaneous f<sub>T</sub>
 of 428 GHz are demonstrated. A DC peak current gain β = 19 and a common-emitter breakdown voltage BV<sub>CEO</sub>
 = 5 V are measured for 0.2 × 4.4-μm<sup>2</sup>
 emitter devices featuring a 20-nm-thick graded GaAsSb base with a sheet resistance of 1077 Ω/□ and a 125-nm-thick more heavily doped InP collector enabling a higher Kirk current. The present transistors are the first InP/GaAsSb DHBTs with an f<sub>MAX</sub>
 in excess of 600 GHz.</div>
</front>
</TEI>
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<fA08 i1="01" i2="1" l="ENG"><s1>InP/GaAsSb DHBTs with Simultaneous f<sub>T</sub>
/f<sub>MAX</sub>
 = 428/621 GHz</s1>
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<fA11 i1="01" i2="1"><s1>LÖVBLOM (Rickard)</s1>
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<fA11 i1="02" i2="1"><s1>FLÜCKIGER (Ralf)</s1>
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<fA11 i1="03" i2="1"><s1>ALEXANDROVA (Maria)</s1>
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<fA14 i1="01"><s1>Department of Informationstechnologie und Elektrotechnik, ETH-Zurich</s1>
<s2>Zurich 8092</s2>
<s3>CHE</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<fA66 i1="01"><s0>USA</s0>
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<fC01 i1="01" l="ENG"><s0>Type-II InP/GaAsSb double heterojunction bipolar transistors (DHBTs) with an f<sub>MAX</sub>
 of 621 GHz and a simultaneous f<sub>T</sub>
 of 428 GHz are demonstrated. A DC peak current gain β = 19 and a common-emitter breakdown voltage BV<sub>CEO</sub>
 = 5 V are measured for 0.2 × 4.4-μm<sup>2</sup>
 emitter devices featuring a 20-nm-thick graded GaAsSb base with a sheet resistance of 1077 Ω/□ and a 125-nm-thick more heavily doped InP collector enabling a higher Kirk current. The present transistors are the first InP/GaAsSb DHBTs with an f<sub>MAX</sub>
 in excess of 600 GHz.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03F04</s0>
</fC02>
<fC02 i1="02" i2="X"><s0>001D03F08</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Transistor bipolaire hétérojonction</s0>
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<s5>02</s5>
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<s5>04</s5>
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<s5>04</s5>
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<fC03 i1="04" i2="X" l="SPA"><s0>Montaje emisor común</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Tension disruptive</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Disruptive voltage</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Voltaje disruptivo</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Emetteur</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Transmitter</s0>
<s5>06</s5>
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<fC03 i1="06" i2="X" l="SPA"><s0>Emisor</s0>
<s5>06</s5>
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<s5>07</s5>
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<s5>07</s5>
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<fC03 i1="07" i2="X" l="SPA"><s0>Resistividad capa</s0>
<s5>07</s5>
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<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Doped materials</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Collecteur</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Collector</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Colector</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Fréquence oscillation</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Oscillation frequency</s0>
<s5>10</s5>
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<fC03 i1="10" i2="X" l="SPA"><s0>Frecuencia oscilación</s0>
<s5>10</s5>
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<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Millimeter wave transistors</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Phosphure d'indium</s0>
<s5>22</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Indium phosphide</s0>
<s5>22</s5>
</fC03>
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<s5>22</s5>
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<s5>23</s5>
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<s5>23</s5>
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<s5>23</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Antimoniure de gallium</s0>
<s2>NK</s2>
<s5>24</s5>
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<s2>NK</s2>
<s5>24</s5>
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<s2>NK</s2>
<s5>25</s5>
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<s2>NK</s2>
<s5>25</s5>
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<s5>26</s5>
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<s5>26</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Compuesto ternario</s0>
<s5>26</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>InP</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>GaAsSb</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC07 i1="01" i2="X" l="FRE"><s0>Composé III-V</s0>
<s5>12</s5>
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<s5>13</s5>
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<fC07 i1="02" i2="X" l="ENG"><s0>Microwave transistor</s0>
<s5>13</s5>
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<fC07 i1="02" i2="X" l="SPA"><s0>Transistor hiperfrecuencia</s0>
<s5>13</s5>
</fC07>
<fN21><s1>252</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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   |texte=   InP/GaAsSb DHBTs with Simultaneous fT/fMAX = 428/621 GHz
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InP/GaAsSb DHBTs with Simultaneous fT/fMAX = 428/621 GHz

InP/GaAsSb DHBTs with Simultaneous fT/fMAX = 428/621 GHz

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri